DMWSH120H90SM3Q
SIC MOSFET BVDSS: >1000V TO247 TManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMWSH120H90SM3Q is a high-performance N-Channel Silicon Carbide MOSFET designed for demanding applications. This component features a drain-to-source breakdown voltage (BVDSS) exceeding 1000V, specifically rated at 1200V. It offers a continuous drain current (Id) of 41A at 25°C (Tc) and a maximum power dissipation (Pd) of 246W (Tc). The device boasts a low on-resistance (Rds On) of 97.5mOhm at 20A and 15V gate-source voltage. Key parameters include a gate charge (Qg) of 50.9 nC at 15V and input capacitance (Ciss) of 1090 pF at 1000V. The DMWSH120H90SM3Q utilizes AEC-Q101 qualified technology, making it suitable for automotive and industrial power conversion systems requiring high efficiency and reliability. It is packaged in a TO-247-3 through-hole configuration and operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 97.5mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 246W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Supplier Device Package | TO-247 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 50.9 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 1000 V |
| Qualification | AEC-Q101 |
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