DMWSH120H43SM4
SIC MOSFET BVDSS: >1000V TO247-4Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMWSH120H43SM4 is an N-Channel Silicon Carbide (SiC) MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 72.7 A at 25°C. With a maximum power dissipation of 341 W (Tc) and a low on-resistance (Rds On) of 43 mOhm at 40 A and 15 V Vgs, it offers efficient power switching. Key parameters include a gate charge (Qg) of 105 nC at 15 V and input capacitance (Ciss) of 2187 pF at 1000 V. The operating temperature range is -55°C to 175°C (TJ). This device is suitable for demanding applications in power conversion and electric vehicle charging infrastructure. The TO-247-4 package is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 40A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 11.5mA |
| Supplier Device Package | TO-247-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2187 pF @ 1000 V |
| Qualification | - |
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