DMWSH120H28SM4Q
SIC MOSFET BVDSS: >1000V TO247-4Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated SiC MOSFET, part number DMWSH120H28SM4Q, is an N-Channel device offering a Drain-Source Voltage (Vdss) of 1200 V. This through-hole component features a continuous drain current (Id) of 100A at 25°C (Tc) and a maximum power dissipation of 429W (Tc). The on-resistance (Rds On) is specified at a maximum of 28.5mOhm at 50A and 15V gate-source voltage. The device has a gate charge (Qg) of 156.3 nC at 15V. Operating temperature range is from -55°C to 175°C (TJ). The TO-247-4 package is suitable for high-power applications. This component is AEC-Q101 qualified and designed for the automotive industry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 50A, 15V |
| Power Dissipation (Max) | 429W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 17.7mA |
| Supplier Device Package | TO-247-4 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 156.3 nC @ 15 V |
| Qualification | AEC-Q101 |
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