DMWSH120H28SM4
SIC MOSFET BVDSS: >1000V TO247-4Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole TO-247-4
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 50A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 429W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 17.7mA |
| Supplier Device Package | TO-247-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 173.7 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3944 pF @ 1000 V |
| Qualification | - |
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