DMWSH120H28SM3Q
SIC MOSFET BVDSS: >1000V TO247 TManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMWSH120H28SM3Q is an N-Channel Silicon Carbide (SiC) MOSFET with a drain-source voltage (Vdss) of 1200 V. This component offers a continuous drain current (Id) of 97.4 A at 25°C and a maximum power dissipation of 405 W at the same temperature. The Rds On is specified at 28.5 mOhm at 50 A and a gate-source voltage (Vgs) of 15 V. Key parameters include a gate charge (Qg) of 175 nC at 15 V and input capacitance (Ciss) of 3905 pF at 1000 V. The device operates across a junction temperature range of -55°C to 175°C. Mounting is via through-hole in a TO-247-3 package. This component is qualified to AEC-Q101, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 97.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 28.5mOhm @ 50A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 405W (Tc) |
| Vgs(th) (Max) @ Id | 3.6V @ 17.7mA |
| Supplier Device Package | TO-247 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3905 pF @ 1000 V |
| Qualification | AEC-Q101 |