DMWS120H100SM4
SIC MOSFET BVDSS: >1000V TO247-4Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMWS120H100SM4 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET. This device features a robust 1200 V drain-source breakdown voltage (BVDSS) and a continuous drain current (Id) of 37.2 A at 25°C. With a maximum on-resistance (Rds On) of 100 mOhm at 20 A and 15 V, it offers excellent conduction efficiency. The DMWS120H100SM4 is rated for 208 W maximum power dissipation and is provided in a TO-247-4 through-hole package. Key electrical characteristics include a gate charge (Qg) of 52 nC at 15 V and input capacitance (Ciss) of 1516 pF at 1000 V. This SiC MOSFET is suitable for demanding applications in power conversion, electric vehicle charging, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +19V, -8V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1516 pF @ 1000 V |
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