DMTH8001STLW-13
MOSFET BVDSS: 61V~100V POWERDI10Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMTH8001STLW-13 is an N-Channel Power MOSFET designed for high-current applications. Featuring a Drain-Source Voltage (Vdss) of 80V and a continuous drain current (Id) of 270A at 25°C (Tc), this device offers exceptional performance. The Rds(On) is a low 1.7mOhm at 30A and 10V drive voltage, minimizing conduction losses. With a maximum power dissipation of 250W (Tc), it is suitable for demanding thermal environments. The MOSFET utilizes Metal Oxide technology and comes in a compact POWERDI1012-8 package for efficient surface mounting. Key parameters include a gate charge of 138 nC at 10V and input capacitance of 8894 pF at 50V. This component is commonly found in power management, automotive, and industrial power systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | POWERDI1012-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8894 pF @ 50 V |
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