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DMTH6005LFG-7

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DMTH6005LFG-7

MOSFET N-CH 60V 19.7A/100A PWRDI

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMTH6005LFG-7 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous drain current capability of 19.7 A at 25°C ambient, scaling to 100 A at 25°C case temperature. The device exhibits a low on-resistance of 4.1 mOhm maximum at 20 A and 10 V. Key characteristics include a gate charge (Qg) of 48.7 nC maximum at 10 V and input capacitance (Ciss) of 3150 pF maximum at 30 V. Designed for surface mounting, it utilizes the 8-PowerVDFN package, specifically the POWERDI3333-8 footprint. Maximum power dissipation is 2.38 W at ambient temperature and 75 W at case temperature. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for power management and switching applications across various industries, including automotive and industrial automation. The DMTH6005LFG-7 is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C19.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs4.1mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.38W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePOWERDI3333-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs48.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3150 pF @ 30 V

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