DMTH6004SPSWQ-13
MOSFET BVDSS: 41V~60V POWERDI506Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel MOSFET, part number DMTH6004SPSWQ-13, offers a 60V drain-source breakdown voltage and a continuous drain current capability of 25A at 25°C ambient and 100A at 25°C case temperature. This AEC-Q101 qualified component features a low on-resistance of 3.1mOhm maximum at 50A and 10V Vgs, and a maximum gate charge of 95.4 nC at 10V. Designed for surface mounting in the wettable flank PowerDI5060-8 (Type UX) package, it supports a maximum power dissipation of 3.2W ambient and 167W case. This device is utilized in demanding automotive applications, including power management and motor control systems. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerDI5060-8 (Type UX) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 95.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4556 pF @ 30 V |
| Qualification | AEC-Q101 |
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