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DMTH6004LPSWQ-13

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DMTH6004LPSWQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel MOSFET with part number DMTH6004LPSWQ-13. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 22A at 25°C ambient and 100A at 25°C case. The Rds(On) is specified at a maximum of 3.1mOhm at 25A and 10V gate-source voltage. Power dissipation is rated at 2.6W ambient and 138W case. It is housed in an 8-PowerDFN package with wettable flanks for enhanced solder joint reliability, specifically the PowerDI5060-8 (Type UX) footprint. This AEC-Q101 qualified component is suitable for automotive applications, offering low on-resistance and high current handling capabilities. Operating temperature range is from -55°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs3.1mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)2.6W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerDI5060-8 (Type UX)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs78.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5399 pF @ 30 V
QualificationAEC-Q101

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