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DMTH46M7SFVWQ-13

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DMTH46M7SFVWQ-13

MOSFET BVDSS: 31V~40V POWERDI333

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel MOSFET, part number DMTH46M7SFVWQ-13, offers a 40V drain-to-source voltage (Vdss) and a continuous drain current of 16.3A (Ta) or 67.2A (Tc). This device features a low on-resistance (Rds On) of 7.4mOhm at 20A and 10V drive. The DMTH46M7SFVWQ-13 is housed in an 8-PowerDI3333-8 (SWP) Type UX surface-mount package with wettable flanks, facilitating robust automated assembly. Its maximum power dissipation is rated at 3.2W (Ta) or 54.5W (Tc). Qualifying for AEC-Q101, this MOSFET is suitable for automotive applications. Key electrical parameters include a gate charge (Qg) of 14.8 nC at 10V and input capacitance (Ciss) of 1315 pF at 20V. The operating temperature range is -55°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs7.4mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1315 pF @ 20 V
QualificationAEC-Q101

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