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DMTH46M7SFVW-13

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DMTH46M7SFVW-13

MOSFET BVDSS: 31V~40V POWERDI333

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel Power MOSFET, part number DMTH46M7SFVW-13, offers a 40V drain-source breakdown voltage. This device features a low on-resistance of 7.4mOhm maximum at 20A and 10V Vgs. Continuous drain current capabilities are 16.3A at ambient temperature and 67.2A at case temperature. Power dissipation is rated at 3.2W (Ta) and 54.5W (Tc). The DMTH46M7SFVW-13 utilizes a PowerDI3333-8 (SWP) Type UX package with wettable flank technology for enhanced solder joint reliability. Input capacitance (Ciss) is a maximum of 1315pF at 20V Vds, and gate charge (Qg) is 14.8nC at 10V Vgs. This MOSFET is suitable for applications in the automotive and industrial sectors. The operating junction temperature range is -55°C to 175°C. The component is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16.3A (Ta), 67.2A (Tc)
Rds On (Max) @ Id, Vgs7.4mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1315 pF @ 20 V

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