DMTH4014LFVW-13
MOSFET BVDSS: 31V~40V POWERDI333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMTH4014LFVW-13 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 40V drain-to-source breakdown voltage (BVDSS) and offers continuous drain current capabilities of 11.5A at ambient temperature and 49.8A at case temperature, with maximum power dissipation of 3.1W (Ta) and 57.7W (Tc). Optimized for performance, it exhibits a low on-resistance (Rds(on)) of 13.7mOhm at 20A and 10V Vgs. The device is housed in a compact 8-PowerVDFN package, specifically the PowerDI3333-8 (SWP) Type UX, suitable for surface mount applications with wettable flanks for enhanced solder joint reliability. Key parameters include a gate charge (Qg) of 11.2 nC and input capacitance (Ciss) of 750 pF. It operates across a wide temperature range of -55°C to 175°C. This component is frequently utilized in automotive, consumer electronics, and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta), 49.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 57.7W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 20 V |
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