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DMTH4001SPSQ-13

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DMTH4001SPSQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMTH4001SPSQ-13 is an N-Channel MOSFET designed for high-power automotive applications. This device features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 225A at 25°C (Tc). With a low Rds On of 1mOhm at 30A and 10V, it offers efficient power handling. The DMTH4001SPSQ-13 is packaged in a PowerDI5060-8 (Type K) surface-mount footprint, enabling robust thermal management with a power dissipation of 187.5W (Tc). Key parameters include Gate Charge (Qg) of 144 nC at 10V and Input Capacitance (Ciss) of 10787 pF at 20V. Operating across a temperature range of -55°C to 175°C (TJ), this AEC-Q101 qualified component is suitable for demanding automotive environments.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C225A (Tc)
Rds On (Max) @ Id, Vgs1mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 187.5W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerDI5060-8 (Type K)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10787 pF @ 20 V
QualificationAEC-Q101

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