DMTH12H007SPSWQ-13
MOSFET BVDSS: 101V~250V PowerDI5Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel Power MOSFET, part number DMTH12H007SPSWQ-13, offers a 120V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 84A at 25°C (Tc). This AEC-Q101 qualified device features a low on-resistance (Rds On) of 8.9mOhm at 30A and 10V Vgs. Designed for surface-mount applications, it utilizes the wettable flank PowerDI5060-8 (Type UX) package, enabling enhanced solder joint inspection. The MOSFET exhibits a maximum power dissipation of 3.5W and an operating junction temperature range of -55°C to 175°C. Typical applications for this component include automotive power management systems and high-efficiency power conversion circuits. The input capacitance (Ciss) is rated at 3142pF maximum at 60V Vds, with a gate charge (Qg) of 44nC maximum at 10V Vgs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerDI5060-8 (Type UX) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3142 pF @ 60 V |
| Qualification | AEC-Q101 |