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DMTH10H4M6SPSW-13

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DMTH10H4M6SPSW-13

MOSFET BVDSS: 61V~100V POWERDI50

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 100 V 21A (Ta), 115A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Ta), 115A (Tc)
Rds On (Max) @ Id, Vgs4.9mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)4.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4327 pF @ 50 V

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