DMTH10H2M2LPSW-13
MOSFET BVDSS: 61V~100V POWERDI50Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMTH10H2M2LPSW-13 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 100V. This device offers a continuous drain current (Id) of 153A at 25°C (Tc) and a low on-resistance (Rds On) of 4.2mOhm at 30A and 10V. Featuring a maximum gate charge (Qg) of 116 nC at 10V and input capacitance (Ciss) of 6239 pF at 50V, it is designed for efficient power switching. The MOSFET supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Its high power dissipation capabilities, rated at 4W (Ta) and 150W (Tc), make it suitable for demanding applications. The component is housed in an 8-PowerTDFN package, specifically the PowerDI5060-8 (Type UX) with wettable flanks for enhanced solder joint reliability. This device finds application in power management, automotive, and industrial automation sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 153A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerDI5060-8 (Type UX) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6239 pF @ 50 V |
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