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DMTH10H030LK3-13

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DMTH10H030LK3-13

MOSFET N-CH 100V 28A TO252

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMTH10H030LK3-13 is an N-Channel MOSFET designed for demanding applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 28A at 25°C (Tc). With a maximum on-resistance (Rds On) of 30mOhm at 20A and 10V Vgs, it offers efficient power handling. The device is qualified to AEC-Q101, indicating its suitability for automotive applications. Key electrical characteristics include a gate charge (Qg) of 33.3 nC maximum at 10V and input capacitance (Ciss) of 1871 pF maximum at 50V. The DMTH10H030LK3-13 is housed in a TO-252-3, DPAK package for surface mounting and operates within a temperature range of -55°C to 175°C. Power dissipation is rated at 2.1W (Ta).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs30mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackageTO-252-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1871 pF @ 50 V
QualificationAEC-Q101

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