DMT69M8LSS-13
MOSFET N-CH 60V 9.8A 8SO T&R 2Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMT69M8LSS-13 is an N-Channel MOSFET designed for efficient power management. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9.8A at 25°C, with a maximum power dissipation of 1.25W. The low on-resistance of 12mOhm at 13.5A and 10V gate-source drive makes it suitable for demanding applications. Key parameters include a maximum gate charge (Qg) of 33.5 nC at 10V and input capacitance (Ciss) of 1925 pF at 30V. Packaged in an 8-SOIC (0.154", 3.90mm Width) and supplied on tape and reel, this device operates across a temperature range of -55°C to 150°C. It finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1925 pF @ 30 V |
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