DMT69M8LPS-13
MOSFET N-CHA 60V 10.2A POWERDIManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number DMT69M8LPS-13. This 60V device features a low Rds(on) of 12mOhm at 13.5A and 10V Vgs, with a continuous drain current of 10.2A at 25°C ambient and 70A at 25°C case. The PowerDI5060-8 package offers excellent thermal performance with a maximum power dissipation of 113W at 25°C case temperature. Key parameters include a gate charge of 33.5 nC at 10V Vgs and input capacitance of 1925 pF at 30V Vds. This AEC-Q101 qualified component is suitable for automotive applications and general power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 113W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PowerDI5060-8 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1925 pF @ 30 V |
| Qualification | AEC-Q101 |
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