DMT69M5LH3
MOSFET BVDSS: 41V~60V TO251 TUBEManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMT69M5LH3 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 75A at 25°C (Tc). The low on-resistance (Rds On) of 10.5mOhm at 20A and 10V drive ensures efficient power transfer. With a maximum gate charge (Qg) of 28.4 nC at 10V and input capacitance (Ciss) of 1406 pF at 30V, it is suitable for various switching frequencies. The device is housed in a TO-251 (IPAK) package, facilitating through-hole mounting. Power dissipation is rated at 3.3W (Ta) and 96W (Tc). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 28.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1406 pF @ 30 V |
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