DMT6009LJ3
MOSFET N-CH 60V 74.5A TO251Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMT6009LJ3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 74.5A at 25°C (Tc). The low on-resistance of 10mOhm is achieved at 13.5A and 10V Vgs, ensuring minimal conduction losses. With a gate charge (Qg) of 33.5 nC at 10V Vgs and input capacitance (Ciss) of 1925 pF at 30V Vds, it offers robust switching performance. The device is housed in a TO-251 (IPA) package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 150°C. Power dissipation is rated at 83.3W (Tc) and 2.9W (Ta). This MOSFET is commonly utilized in automotive, industrial automation, and power supply systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Ta), 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-251 (Type TH) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1925 pF @ 30 V |
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