DMT5015LFDF-7
MOSFET N-CH 50V 9.1A 6UDFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMT5015LFDF-7 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 50V drain-source breakdown voltage and a continuous drain current capability of 9.1A at 25°C ambient temperature. The low on-resistance of 15mOhm is achieved at 8A drain current and 10V gate-source voltage, facilitating reduced conduction losses. With a maximum power dissipation of 820mW at 25°C ambient, it is suitable for thermally constrained designs. The U-DFN2020-6 (Type F) package offers a compact footprint for surface mounting, making it ideal for portable electronics, power supplies, and automotive applications. Key parameters include a gate charge of 14 nC at 10V Vgs and input capacitance of 902.7 pF at 25V Vds. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 820mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 902.7 pF @ 25 V |
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