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DMT4001LPS-13

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DMT4001LPS-13

MOSFET N-CH 40V 100A PWRDI5060-8

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMT4001LPS-13 is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 100A (Tc). The Rds On is specified at a maximum of 1mOhm at 30A and 10V gate drive. Key characteristics include a gate charge (Qg) of 160.5 nC (max) at 10V and input capacitance (Ciss) of 12121 pF (max) at 20V. The device is housed in a PowerDI5060-8 (Type K) surface mount package, offering excellent thermal performance with a maximum power dissipation of 2.6W. Operating temperatures range from -55°C to 150°C (TJ). This MOSFET is suitable for use in power management solutions and automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs1mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)2.6W
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs160.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12121 pF @ 20 V

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