DMT31M7LSS-13
MOSFET BVDSS: 25V~30V SO-8 T&R 2Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMT31M7LSS-13 is an N-Channel MOSFET in an 8-SO package, supplied on tape and reel. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current capability of 25A at ambient temperature and 78A at case temperature. The Rds(On) is specified at a maximum of 2.7mOhm at 20A and 10V gate drive. Key parameters include a gate charge (Qg) of 84 nC at 10V and input capacitance (Ciss) of 5492 pF at 15V. Power dissipation is rated at 1.7W (Ta) and 5.9W (Tc). It operates within a temperature range of -55°C to 150°C. This component finds application in power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 5.9W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5492 pF @ 15 V |
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