DMT3006LFDFQ-7
MOSFET BVDSS: 25V~30V U-DFN2020-Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMT3006LFDFQ-7 is an N-Channel Power MOSFET with a drain-to-source voltage (Vdss) of 30V. This component features a low on-resistance (Rds(on)) of 7mOhm at 9A and 10V Vgs, and supports continuous drain current (Id) up to 14.1A (Ta). The gate charge (Qg) is a maximum of 8.4 nC at 10V Vgs. Designed for surface mounting, it utilizes the U-DFN2020-6 (Type F) package, offering an exposed pad for enhanced thermal performance. With a maximum power dissipation of 800mW and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is AEC-Q101 qualified and suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 3.7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1155 pF @ 15 V |
| Qualification | AEC-Q101 |
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