DMT12H090LFDF4-7
MOSFET N-CH 115V 3.4A 6DFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMT12H090LFDF4-7 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a drain-source voltage (Vdss) of 115 V and a continuous drain current (Id) capability of 3.4 A at 25°C (Ta). The Rds(on) is specified at a maximum of 90 mOhm at 3.5 A and 10 V Vgs. With a gate charge (Qg) of 6 nC maximum at 10 V and input capacitance (Ciss) of 251 pF maximum at 50 V, it offers competitive switching characteristics. The MOSFET is housed in a compact 6-PowerXDFN package, specifically the X2-DFN2020-6, enabling efficient thermal performance with a maximum power dissipation of 900 mW (Ta). Its operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in various industries including industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerXDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | X2-DFN2020-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 115 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 251 pF @ 50 V |
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