DMT12H065LFDF-13
MOSFET N-CH 115V 4.3A 6UDFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMT12H065LFDF-13 is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 115V and a continuous drain current (Id) of 4.3A at 25°C. The Rds On is specified at a maximum of 65mOhm at 3A and 10V gate drive. With a low input capacitance (Ciss) of 252pF at 50V Vds and a gate charge (Qg) of 5.5nC at 10V, it offers efficient switching characteristics. The device is packaged in a compact 6-UDFN Exposed Pad (U-DFN2020-6 Type F) for surface mounting and supports a maximum power dissipation of 1W. Operating temperature range is from -55°C to 150°C. This MOSFET is suitable for use in power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 115 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 252 pF @ 50 V |
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