DMT10H072LFDFQ-13
MOSFET BVDSS: 61V~100V U-DFN2020Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number DMT10H072LFDFQ-13, offers a 100V drain-to-source breakdown voltage and 4A continuous drain current at 25°C. This AEC-Q101 qualified component features a maximum on-resistance of 62mOhm at 4.5A and 10V Vgs. The U-DFN2020-6 (Type F) package is designed for surface mount applications, providing a compact footprint with an exposed pad. With a gate charge of 4.5 nC at 10V and input capacitance of 228 pF at 50V, it is suitable for high-frequency switching applications. Operating temperature range is -55°C to 150°C. This device finds utility in automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 228 pF @ 50 V |
| Qualification | AEC-Q101 |
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