DMT10H072LFDF-13
MOSFET N-CH 100V 4A 6UDFNManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMT10H072LFDF-13, an N-Channel MOSFET designed for efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 4A at 25°C with a maximum power dissipation of 800mW. The Rds(On) is specified at a maximum of 62mOhm at 4.5A and 10V drive voltage, with a 4.5V minimum drive voltage.
The DMT10H072LFDF-13 utilizes a U-DFN2020-6 (Type F) package, a compact 6-lead U-DFN with an exposed pad, suitable for surface mounting. Key electrical characteristics include a maximum Gate Charge (Qg) of 5.1 nC at 10V and a maximum Input Capacitance (Ciss) of 266 pF at 50V. The device operates within an extended temperature range of -55°C to 150°C. This MOSFET is commonly employed in power management applications across consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 266 pF @ 50 V |
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