DMT10H052LFDF-7
MOSFET BVDSS: 61V~100V U-DFN2020Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel MOSFET, part number DMT10H052LFDF-7. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 5A at 25°C. The specified On-Resistance (Rds On) is a maximum of 52mOhm at 4A and 10V Vgs. It is constructed using MOSFET technology and housed in a 6-UDFN Exposed Pad (U-DFN2020-6 Type F) package for surface mounting. Key parameters include a Gate Charge (Qg) of 5.4 nC at 10V and Input Capacitance (Ciss) of 258 pF at 50V. The maximum power dissipation is 800mW at 25°C. This component is suitable for applications requiring efficient switching and power management in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 258 pF @ 50 V |
Request a Quote
Clients Also Buy
DMN31D6UT-7
MOSFET N-CH 30V 350MA SOT523
DMN601WKQ-13
MOSFET N-CH 60V SOT323
BSS123W-7
MOSFET N-CH 100V 170MA SOT323
