DMT10H052LFDF-13
MOSFET BVDSS: 61V~100V U-DFN2020Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, part number DMT10H052LFDF-13. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 5A at 25°C (Ta). The Rds On is specified at a maximum of 52mOhm at 4A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 5.4 nC at 10V and Input Capacitance (Ciss) of 258 pF at 50V Vds. The device operates with a Vgs range of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. Power dissipation is 800mW (Ta). This MOSFET is supplied in a U-DFN2020-6 (Type F) package, suitable for surface mounting. It is commonly utilized in industrial and automotive applications requiring efficient power switching. The component is provided on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 258 pF @ 50 V |
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