DMT10H009SCG-7
MOSFET BVDSS: 61V~100V V-DFN3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel Power MOSFET, part number DMT10H009SCG-7, offers a Drain to Source Voltage (Vdss) of 100V. This device features a maximum continuous drain current of 14A at ambient temperature and 48A at case temperature, with a maximum power dissipation of 1.3W (Ta). The Rds On is specified at a low 9.5mOhm at 20A and 10V gate drive. Key parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 2085 pF at 50V. The component is housed in an 8-PowerVDFN (V-DFN3333-8 Type B) surface mount package and operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in power management and automotive sectors. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | V-DFN3333-8 (Type B) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2085 pF @ 50 V |
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