DMT10H009LSS-13
MOSFET N-CH 100V 13A/48A 8SO T&RManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated DMT10H009LSS-13 is a N-Channel MOSFET designed for robust power switching applications. This component features a 100 V drain-source voltage (Vdss) and offers a continuous drain current of 13A (Ta) and 48A (Tc). With a low on-resistance (Rds On) of 9mOhm at 10A, 10V, it ensures efficient power transfer. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 40.2 nC at 10V, with an input capacitance (Ciss) of 2309 pF at 50V. The DMT10H009LSS-13 is housed in an 8-SOIC package, suitable for surface mounting, and operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supplies, motor control, and battery management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2309 pF @ 50 V |
Request a Quote
Clients Also Buy
DMN2053UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
DMN2011UFDF-13
MOSFET N-CH 20V 14.2A 6UDFN
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
