DMS3016SSSA-13
MOSFET N-CH 30V 9.8A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMS3016SSSA-13 is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 9.8A at 25°C. With a maximum on-resistance (Rds On) of 13mOhm at 9.8A and 10V Vgs, it offers efficient power handling. The device incorporates a Schottky diode, enhancing its switching characteristics. Key parameters include a gate charge (Qg) of 43 nC maximum at 10V Vgs and input capacitance (Ciss) of 1849 pF maximum at 15V Vds. This surface mount component, housed in an 8-SOIC package, operates across a temperature range of -55°C to 150°C. The DMS3016SSSA-13 is suitable for use in power management, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 9.8A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 1.54W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1849 pF @ 15 V |
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