DMS3016SSS-13
MOSFET N-CH 30V 9.8A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated MOSFET N-Channel, part number DMS3016SSS-13, is a 30V device with a continuous drain current of 9.8A at 25°C. This surface mount component features a low on-resistance of 13mOhm at 9.8A and 10V Vgs. The 8-SOIC package is supplied on tape and reel. The device includes an integrated Schottky diode, and its typical applications span industrial and automotive sectors. Key parameters include a maximum gate-source voltage of ±12V, gate charge of 43nC at 10V, and input capacitance of 1849pF at 15V. Maximum power dissipation is 1.54W.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 9.8A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 1.54W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1849 pF @ 15 V |
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