DMS3014SSS-13
MOSFET N-CH 30V 10.4A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMS3014SSS-13 is an N-Channel MOSFET designed for demanding applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 10.4A at 25°C. The low on-resistance of 13mOhm at 10.4A and 10V Vgs, achievable with drive voltages between 4.5V and 10V, ensures efficient power handling. The device offers a maximum power dissipation of 1.55W (Ta) and operates across a wide temperature range of -55°C to 150°C. Key characteristics include a gate charge (Qg) of 45.7 nC (max) at 10V Vgs and input capacitance (Ciss) of 2296 pF (max) at 15V Vds. The DMS3014SSS-13 incorporates a Schottky diode within its body and is supplied in an 8-SOIC (0.154", 3.90mm Width) package, suitable for surface mounting. This component is commonly utilized in the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10.4A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 1.55W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2296 pF @ 15 V |
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