DMS3012SFG-7
MOSFET N-CH 30V 12A POWERDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated presents the DMS3012SFG-7, an N-Channel MOSFET featuring a 30V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Ta). This device utilizes Metal Oxide technology and is housed in a compact POWERDI3333-8 surface mount package, offering a low on-resistance of 10mOhm at 13.5A and 10V Vgs. Key electrical characteristics include a maximum gate charge of 14.7 nC at 10V and an input capacitance of 4310 pF at 15V. The component integrates a Schottky diode within its body, enhancing its switching performance. Operating across a temperature range of -55°C to 150°C (TJ), the DMS3012SFG-7 is suitable for power management applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 13.5A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 890mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4310 pF @ 15 V |
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