DMS3012SFG-13
MOSFET N-CH 30V 12A POWERDI3333Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated's DMS3012SFG-13 is an N-channel MOSFET featuring a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C. This device is housed in a compact 8-PowerVDFN package, specifically the POWERDI3333-8 footprint, facilitating efficient thermal management with a power dissipation of 890mW (Ta). The low on-resistance (Rds On) of 10mOhm is achieved at 13.5A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 14.7 nC (max) at 10V and an input capacitance (Ciss) of 4310 pF (max) at 15V. The integrated Schottky diode within the MOSFET body enhances performance. This component is suitable for applications in automotive and industrial power management systems. Operating temperature ranges from -55°C to 150°C (TJ) with a maximum Vgs of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 13.5A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 890mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | POWERDI3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4310 pF @ 15 V |
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