DMP65H9D0HSS-13
MOSFET BVDSS: 501V~650V SO-8 T&RManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP65H9D0HSS-13 is a P-Channel MOSFET designed for high voltage applications up to 600V. This component features a low on-resistance of 9 Ohms maximum at 300mA and 10V drive voltage. With a continuous drain current of 300mA at 25°C and a maximum power dissipation of 1.25W, it is suitable for demanding power management tasks. Key specifications include a gate charge of 17 nC and input capacitance of 740 pF. The DMP65H9D0HSS-13 is packaged in an 8-SOIC (0.154" width) and supplied on tape and reel. This MOSFET is utilized in applications requiring efficient switching and voltage blocking, often found in power supplies and industrial control systems. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |
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