DMP65H13D0HSS-13
MOSFET BVDSS: 501V~650V SO-8 T&RManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP65H13D0HSS-13 is a P-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current of 250mA at 25°C (Ta). The Rds On is specified at a maximum of 13 Ohms at 250mA and 10V gate drive. Key electrical characteristics include a maximum gate charge (Qg) of 13.4 nC and a maximum input capacitance (Ciss) of 582 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.9W (Ta). Supplied in an 8-SOIC package (0.154", 3.90mm width) on tape and reel, this MOSFET is suitable for power management and general-purpose switching in industrial and consumer electronics. The threshold gate-source voltage (Vgs(th)) is a maximum of 4V at 250µA, with a maximum gate-source voltage (Vgs(max)) of ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
| Rds On (Max) @ Id, Vgs | 13Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 582 pF @ 25 V |
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