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DMP6350SQ-13

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DMP6350SQ-13

MOSFET P-CH 60V 1.5A SOT23

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP6350SQ-13 is a P-Channel MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 1.5A at 25°C. The DMP6350SQ-13 exhibits a maximum On-Resistance (Rds On) of 350mOhm at 900mA and 10V Vgs, with a specified gate drive range from 4.5V to 10V. Key parameters include a maximum power dissipation of 720mW and a gate charge (Qg) of 4.1 nC at 10V. The device operates across a temperature range of -55°C to 150°C and is packaged in a compact SOT-23-3 (TO-236-3) surface-mount configuration. This AEC-Q101 qualified component is suitable for automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs350mOhm @ 900mA, 10V
FET Feature-
Power Dissipation (Max)720mW
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds206 pF @ 30 V
QualificationAEC-Q101

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