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DMP6185SE-7

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DMP6185SE-7

MOSFET P-CH 60V 3A SOT223

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP6185SE-7 is a P-Channel MOSFET designed for robust performance. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) of 3A at 25°C. The device offers a low on-resistance (Rds On) of 150mOhm at 2.2A and 10V Vgs. Fabricated using advanced MOSFET technology, it boasts a gate charge (Qg) of 14 nC maximum at 10V Vgs and an input capacitance (Ciss) of 708 pF maximum at 30V Vds. The DMP6185SE-7 is rated for a maximum power dissipation of 1.2W (Ta) and operates across a wide temperature range of -55°C to 150°C (TJ). Packaged in a compact SOT-223-3 (TO-261-4, TO-261AA) surface mount configuration, this component is supplied on tape and reel. Its Automotive grade and AEC-Q101 qualification make it suitable for demanding automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs150mOhm @ 2.2A, 10V
FET Feature-
Power Dissipation (Max)1.2W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-223-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds708 pF @ 30 V
QualificationAEC-Q101

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