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DMP58D0LFB-7

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DMP58D0LFB-7

MOSFET P-CH 50V 180MA 3DFN

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP58D0LFB-7 is a P-channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 50V and a continuous drain current (Id) of 180mA at 25°C. The Rds On is specified at a maximum of 8 Ohms when tested at 100mA and 5V Vgs. The device utilizes advanced TrenchFET technology, offering low on-resistance and gate charge. It is supplied in a compact X1-DFN1006-3 package, suitable for space-constrained designs. The DMP58D0LFB-7 is commonly found in portable electronics, power management circuits, and battery-operated devices. Key electrical parameters include a maximum power dissipation of 470mW (Ta) and an input capacitance (Ciss) of 27pF at 25V. The operating temperature range is from -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-UFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C180mA (Ta)
Rds On (Max) @ Id, Vgs8Ohm @ 100mA, 5V
FET Feature-
Power Dissipation (Max)470mW (Ta)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device PackageX1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Input Capacitance (Ciss) (Max) @ Vds27 pF @ 25 V

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