DMP45H4D9HJ3
MOSFET P-CH 450V 4.6A TO251Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated offers the DMP45H4D9HJ3, a P-Channel MOSFET with a drain-source breakdown voltage of 450V. This component is designed for through-hole mounting in a TO-251 package. It features a continuous drain current capability of 4.6A at 25°C and a maximum power dissipation of 104W at the same temperature. The Rds On is specified at 4.9 Ohms maximum with an Id of 1.05A and Vgs of 10V. Key parameters include a gate charge of 13.7 nC (max) at 10V and input capacitance (Ciss) of 547 pF (max) at 25V. This MOSFET is suitable for applications requiring high voltage switching, commonly found in power supplies, motor control, and lighting systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9Ohm @ 1.05A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 547 pF @ 25 V |
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