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DMP4013SPSQ-13

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DMP4013SPSQ-13

MOSFET P-CH 40V 11A PWRDI5060

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMP4013SPSQ-13 is a P-Channel MOSFET designed for demanding applications. This automotive-grade component features a 40 V Drain-to-Source Voltage (Vdss) and supports a continuous drain current of 11 A at 25°C ambient and 61 A at 25°C case temperature. With a low on-resistance of 15 mOhm maximum at 10 A and 10 V, the DMP4013SPSQ-13 minimizes conduction losses. Its PowerDI5060-8 package offers efficient thermal management with a maximum power dissipation of 1.6 W at 25°C ambient. Key electrical characteristics include a gate charge (Qg) of 67 nC maximum at 10 V and input capacitance (Ciss) of 4004 pF maximum at 20 V. The device operates across a temperature range of -55°C to 150°C (TJ) and meets AEC-Q101 qualification standards. This MOSFET is suitable for automotive power management and switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerDI5060-8
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4004 pF @ 20 V
QualificationAEC-Q101

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