DMP3165SVT-7
MOSFET BVDSS: 25V-30V TSOT26Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMP3165SVT-7 is a high-performance P-Channel MOSFET designed for demanding applications. It features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 2.7A at 25°C, with a maximum power dissipation of 800mW. The device exhibits a low on-resistance (Rds On) of 95mOhm at 2.7A and 10V gate drive. Key parameters include a gate charge (Qg) of 6.8 nC at 10V and an input capacitance (Ciss) of 287 pF at 15V. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is housed in a compact TSOT-26 package, suitable for surface mounting. Its specifications make it ideal for use in power management, battery charging circuits, and portable electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 287 pF @ 15 V |
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