DMP3068LVT-7
MOSFET P-CH 30V 2.8A TSOT26 T&RManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMP3068LVT-7 is a P-Channel enhancement mode MOSFET designed for various power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 2.8A at 25°C ambient. The device exhibits a maximum On-Resistance (Rds(on)) of 75mOhm at 4.2A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 1.3V at 250µA. Gate charge (Qg) is specified at a maximum of 7.3 nC at 4.5V Vgs, and input capacitance (Ciss) is a maximum of 708 pF at 15V Vds. The DMP3068LVT-7 is housed in a compact TSOT-26 package, suitable for surface mounting. It is rated for an operating temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.25W. This MOSFET is frequently utilized in consumer electronics and industrial automation sectors. The part is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 4.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 708 pF @ 15 V |
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