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DMP3068LVT-13

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DMP3068LVT-13

MOSFET P-CH 30V 2.8A TSOT26 T&R

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Diodes Incorporated DMP3068LVT-13 is a P-channel MOSFET designed for surface-mount applications. This component features a Drain-Source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.8A at 25°C. It offers a maximum on-resistance (Rds On) of 75mOhm at 4.2A and 10V Vgs, with a threshold voltage (Vgs(th)) of 1.3V at 250µA. The device is packaged in a TSOT-26 (SOT-23-6 Thin) and supplied on tape and reel. Key parameters include a gate charge (Qg) of 7.3 nC at 4.5V Vgs and input capacitance (Ciss) of 708 pF at 15V Vds. It operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in battery management and power switching applications within the consumer electronics and automotive industries.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Rds On (Max) @ Id, Vgs75mOhm @ 4.2A, 10V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Vgs(th) (Max) @ Id1.3V @ 250µA
Supplier Device PackageTSOT-26
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs7.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds708 pF @ 15 V

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