DMP3065LVT-7
MOSFET P-CH 30V 4.9A TSOT-26Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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The Diodes Incorporated DMP3065LVT-7 is a P-channel, enhancement mode MOSFET designed for high-efficiency power management applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4.9A at 25°C. The low on-resistance (Rds(on)) of 42mOhm is achieved at 4.9A and 10V gate-source voltage, minimizing conduction losses.
With a maximum power dissipation of 1.2W (Ta), this MOSFET is suitable for surface mount applications utilizing the TSOT-26 package. Key electrical parameters include a gate charge (Qg) of 12.3 nC (max) at 10V and input capacitance (Ciss) of 587 pF (max) at 15V. The device operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in automotive, industrial, and consumer electronics for load switching and power control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | TSOT-26 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 587 pF @ 15 V |
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